linear & power amplifiers - chip 3 3 - 2 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com discontinued product not recommended for new designs hmc283 gaas mmic medium power amplifier, 17 - 40 ghz v03.1007 general description features functional diagram high gain: 21 db psat output power: +21 dbm wideband performance: 17 - 40 ghz small chip size: 1.72 x 0.88 x 0.1 mm electrical speci cations, t a = +25 c, vdd= +3.5v*, ldd = 300 ma typical applications the hmc283 chip is a four stage gaas mmic medium power ampli er (mpa) which covers the frequency range of 17 to 40 ghz. the chip can easily be inte- grated into multi-chip modules (mcms) due to its small size. the chip utilizes a gaas phemt process offering 21 db gain and +21 dbm output power from a bias supply of +3.5v @ 300 ma. the hmc283 may be used as a frequency doubler. a b.i.t. (built-in-test) pad (vdet) allows monitoring microwave output power. all data is with the chip in a 50 ohm test xture con- nected via 0.076 x 0.0127mm (3mil x 0.5mil) ribbon bonds of minimal length 0.31mm (<12mils). the hmc283 is ideal for: ? millimeterwave point-to-point radios ? vsat ? satcom parameter min. typ. max. units frequency range 17 - 40 ghz gain 16 21 db gain flatness (any 1 ghz bw) 0.8 db input return loss 9db output return loss 6db reverse isolation 40 50 db output power for 1 db compression (p1db) 14 18 dbm saturated output power (psat) 17 21 dbm output third order intercept (ip3) 21 26 dbm noise figure 10 14 db supply current (idd)(vdd = +3.5v, vgg = -0.15v typ.) 300 400 ma *vdd = vdd1, 2, 3, 4 connected to +3.5v, adjusting vgg = vgg1, 2, 3, 4 between -2.0 to +0.4v to achieve idd = 300 ma typical.
linear & power amplifiers - chip 3 3 - 3 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com discontinued product not recommended for new designs reverse isolation vs. temperature input return loss vs. temperature broadband gain & return loss gain vs. temperature noise figure vs. temperature output return loss vs. temperature -25 -20 -15 -10 -5 0 5 10 15 20 25 30 0 10203040 s11 s21 s22 response (db) frequency (ghz) -20 -16 -12 -8 -4 0 10 15 20 25 30 35 40 +25c -55c +85c return loss (db) frequency (ghz) -20 -16 -12 -8 -4 0 10 15 20 25 30 35 40 +25 c -55 c +85 c return loss (db) frequency (ghz) 0 2 4 6 8 10 12 14 10 15 20 25 30 35 40 +25 c -55 c +85 c noise figure (db) frequency (ghz) -70 -60 -50 -40 -30 -20 -10 0 10 15 20 25 30 35 40 isolation (db) frequency (ghz) +85 c +25 c -55 c 10 14 18 22 26 30 10 15 20 25 30 35 40 +25c -55c +85c gain (db) frequency (ghz) hmc283 v03.1007 gaas mmic medium power amplifier, 17 - 40 ghz
linear & power amplifiers - chip 3 3 - 4 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com discontinued product not recommended for new designs output p1db vs. temperature output psat vs. temperature power compression @ 20 ghz output ip3 vs. temperature power compression @ 28 ghz power compression @ 39 ghz frequency (ghz) temperature 20 28 38 -55 c 25.6 25.4 28.6 +25 c 27.5 25.9 27.1 +85 c 27 24.4 25.7 all levels in dbm 0 4 8 12 16 20 24 -10-8-6-4-20246810 +25 c -55 c +85 c pout (dbm), gain (db), pae (%) input power (dbm) 0 2 4 6 8 10 12 14 16 18 20 22 24 -10-8-6-4-20246810 +25 c -55 c +85 c pout (dbm), gain (db), pae (%) input power (dbm) 15 17 19 21 23 25 16 20 24 28 32 36 40 +25c -55c +85c psat (dbm) frequency (ghz) 0 4 8 12 16 20 24 -10-8-6-4-20246810 +25 c -55 c +85 c pout (dbm), gain (db), pae (%) input power (dbm) 13 15 17 19 21 23 16 20 24 28 32 36 40 +25 c -55 c +85 c p1db (dbm) frequency (ghz) hmc283 v03.1007 gaas mmic medium power amplifier, 17 - 40 ghz
linear & power amplifiers - chip 3 3 - 5 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com discontinued product not recommended for new designs outline drawing absolute maximum ratings notes: 1. all dimensions are in inches [mm] 2. die thickness is .004 3. typical bond is .004 square 4. backside metallization: gold 5. bond pad metallization: gold 6. backside metal is ground. 7. connection not required for unlabeled bond pads. drain bias voltage (vdd1, vdd2, vdd3, vdd4) +5vdc drain bias current (idd) 400 ma gate bias voltage (vgg1, vgg2, vgg3, vgg4) -2 to +0.4vdc gate bias current (igg) 4 ma rf input power (rfin)(vdd = +3.5 vdc) +8 dbm channel temperature 175 c continuous pdiss (t = 85 c) (derate 13.04 mw/c above 85 c) 1.174 w thermal resistance (channel to die bottom) 76.7 c/w storage temperature -65 to +150 c operating temperature -55 to +85 c electrostatic sensitive device observe handling precautions die packaging information [1] standard alternate gp-2 [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. hmc283 v03.1007 gaas mmic medium power amplifier, 17 - 40 ghz
linear & power amplifiers - chip 3 3 - 6 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com discontinued product not recommended for new designs pin number function pin description interface schematic 1 rfin this pad is ac coupled and matched to 50 ohms. 2vdd1 power supply voltage for the ampli er. external bypass caps of 100pf and 0.1 f are required. 3, 10 vgg2 gate control for ampli er. adjust vgg ( = vgg1, vgg2, vgg3, vgg4) to achieve idd = 300ma. external bypass caps of 100pf and 0.1 f are required. 4, 5 vdd2, 3. 4 power supply voltage for the ampli er. external bypass caps of 100pf and 0.1 f are required. 6 rfout this pad is ac coupled and matched to 50 ohms. 7v det output power veri cation pad. 8vgg4 gate control for ampli er. adjust vgg ( = vgg1, vgg2, vgg3, vgg4) to achieve idd = 300ma. external bypass caps of 100pf and 0.1 f are required. 9vgg3 gate control for ampli er. adjust vgg ( = vgg1, vgg2, vgg3, vgg4) to achieve idd = 300ma. external bypass caps of 100pf and 0.1 f are required. 11 vg g1 gate control for ampli er. adjust vgg ( = vgg1, vgg2, vgg3, vgg4) to achieve idd = 300ma. external bypass caps of 100pf and 0.1 f are required. pin descriptions hmc283 v03.1007 gaas mmic medium power amplifier, 17 - 40 ghz
linear & power amplifiers - chip 3 3 - 7 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com discontinued product not recommended for new designs mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy ( see hmc general handling, mounting, bonding note ). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). rf bypass capacitors should be used on the vdd & vgg inputs. 100pf single layer capacitors (mounted eutectically or by conductive epoxy) placed no further than 0.762 mm (30 mils) from the chip are recommended. the photo in gure 3 shows a typical assembly for the hmc283 mmic chip. 0.102mm (0.004?) thick gaas mmic ribbon bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic ribbon bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab hmc283 v03.1007 gaas mmic medium power amplifier, 17 - 40 ghz figure 3: typical hmc283 assembly handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers.
linear & power amplifiers - chip 3 3 - 8 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com discontinued product not recommended for new designs 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 10 12 14 16 18 20 22 detected voltage into 10k resistor (volts) -55 c +85 c +25 c hmc283 v03.1007 gaas mmic medium power amplifier, 17 - 40 ghz 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 10 12 14 16 18 20 22 18 ghz 28 ghz 22 ghz 38 ghz detected voltage into 10k resistor (volts) mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy ( see hmc general handling, mounting, bonding note ). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). rf bypass capacitors should be used on the vdd & vgg inputs. 100pf single layer capacitors (mounted eutectically or by conductive epoxy) placed no further than 0.762 mm (30 mils) from the chip are recommended. the photo in gure 3 shows a typical assembly for the hmc283 mmic chip. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire (dc bias) or ribbon bond (rf ports) 0.076mm x 0.013mm (3 mil x 0.5 mil) size is recommended. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). hmc283 alternate applications: -10 -7 -4 -1 2 5 10 15 20 25 30 35 40 +10 dbm +15 dbm +18 dbm conversion loss (db) output frequency (ghz)
linear & power amplifiers - chip 3 3 - 9 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com discontinued product not recommended for new designs hmc283 v03.1007 gaas mmic medium power amplifier, 17 - 40 ghz notes:
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